PART |
Description |
Maker |
HM64YLB36512BP-33 HM64YLB36512 HM64YLB36512BP-28 |
16M Synchronous Late Write Fast Static RAM (512-kword 隆驴 36-bit) 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18 Organization) From old datasheet system
|
Sony
|
CXK77B1840GB |
4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization) From old datasheet system
|
Sony
|
GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
UPD44323362F1-C40-FJ1 UPD44323362 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC[NEC]
|
MCM63R736 |
4M Late Write HSTL From old datasheet system
|
Motorola
|
GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
GS8170LW36AGC-250 GS8170LW36AC-350 GS8170LW36AC-35 |
18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|